Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors-Reference-Cited by-同舟云学术

Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors

Published:1987-10-12 Issue:15 Volume:51 Page:1170-1172
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schubert E. F.,Cunningham J. E.,Tsang W. T.,Timp G. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98722

Reference15 articles.

1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

2. Two-dimensional electron gas at a semiconductor-semiconductor interface

3. GaAs structures with electron mobility of 5×106cm2/V s

4. High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric AlxGa1-xAs/GaAs/AlyGa1-yAs Quantum Wells

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