Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5037925
Reference28 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. High-quality diamond films grown at high deposition rates using high-power-density MWPCVD method with conventional quartz-type chamber
3. Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
4. High-frequency performance of diamond field-effect transistor
5. Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz
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