High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al 2 O 3 dielectric
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
2. Xidian-Wuhu Research Institute, Wuhu, China
3. SICC CO., Ltd, Jinan, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Key R&D Plan of Shandong Province
China Postdoctoral Science Foundation
Publisher
Informa UK Limited
Subject
General Medicine
Link
https://www.tandfonline.com/doi/pdf/10.1080/26941112.2023.2219687
Reference32 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. High quality MPACVD diamond single crystal growth: high microwave power density regime
3. Large‐area mosaic diamond films approaching single‐crystal quality
4. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
5. Maximum Output Power Control Using Short-Circuit Current and Open-Circuit Voltage of a Solar Panel
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