Silicon carbide oxidation in the presence of cesium: Modeling and analysis
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3493112
Reference21 articles.
1. Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide
2. Intrinsic SiC/SiO2 Interface States
3. Simulations of quantized inversion layer electron transport in 6H–Silicon carbide metal oxide semiconductor structures
4. High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
5. Alkali-metal-promoted oxidation of the Si(100)2×1 surface: Coverage dependence and nonlocality
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices;Applied Physics Letters;2013-03-25
2. Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs;Materials Science Forum;2012-05
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