High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material-Reference-Cited by-同舟云学术

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High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Published:2005-02 Issue:2 Volume:26 Page:96-98
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gudjonsson G.,Olafsson H.O.,Allerstam F.,Nilsson P.-A.,Sveinbjornsson E.O.,Zirath H.,Rodle T.,Jos R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/30178/01386406.pdf?arnumber=1386406

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1. Effects of 5 MeV proton irradiation on 4H-SiC lateral pMOSFETs on-state characteristics;Microelectronics Journal;2023-07

2. Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs;Key Engineering Materials;2023-05-19

3. Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation;AIP Advances;2023-05-01

4. Silicon Carbide Power Devices;Springer Handbook of Semiconductor Devices;2022-11-11

5. Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation;Japanese Journal of Applied Physics;2021-02-09

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