Interdiffusion study of amorphous Ni–Si multilayer at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354684
Reference22 articles.
1. Diffusivity of gold in amorphous silicon measured by the artificial multilayer technique
2. Interdiffusions in Cu/reactive‐ion‐sputtered TiN, Cu/chemical‐vapor‐deposited TiN, Cu/TaN, and TaN/Cu/TaN thin‐film structures: Low temperature diffusion analyses
3. Measurements of interdiffusion in electrodeposited nickel‐phosphorus multilayers
4. Low-temperature reaction of buried metal-silicon interfaces: the evolution of interfacial structure
5. Relationship between characteristics of modulation peaks and modulation wavelength, average composition, and interdiffusion tendency of multilayers
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