Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121956
Reference10 articles.
1. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy
2. A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR) switch for multiple-valued logic applications
3. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy
4. Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors
5. An AlGaAs/GaAs heterostructure-emitter bipolar transistor
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1. Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector;Journal of Applied Physics;2008-06
2. Characteristics of an InGaP/Al[sub X]Ga[sub 1−X]As/GaAs composite-emitter heterojunction bipolar transistor (CEHBT);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
3. Comparative study on temperature-dependent characteristics of InP∕InGaAs single- and double-heterojunction bipolar transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure;IEEE Electron Device Letters;2008-01
5. Characteristics of an InP∕InGaAs Double Heterojunction Bipolar Transistor with an InAlGaAs∕InP Composite Collector Structure;Journal of The Electrochemical Society;2008
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