Effect of post‐silicidation annealing on TiSi2/p+‐nSi junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339573
Reference15 articles.
1. Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide-semiconductor technologies
2. Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation
3. Junction leakage in titanium self‐aligned silicide devices
4. Matrix representations and criteria for selecting analytical wavelengths for multicomponent spectroscopic analysis
5. Minority Carrier Diffusion Lengths in Silicon Slices and Shallow Junction Devices
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2. Development of a Low-Power Static Random Access Memory with a Spacer-on-Stopper Structure Using Co Salicide;Journal of the Korean Physical Society;2003-11-15
3. High aspect ratio contacts: A review of the current tungsten plug process;Thin Solid Films;1997-07
4. Formation of TiSi2/n+ /p-Silicon Junctions by Implantation through Metal Technique;Physica Status Solidi (a);1993-11-16
5. Influence of contact treatments on the electrical characteristics of shallow-junction titanium-based contacts;Solid-State Electronics;1992-06
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