Author:
Nauka K.,Amano Jun,Scott M.P.,Weber E.R.,Turner J.E.,Tsai R.
Abstract
AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. 2. Amano J. , Nauka K. , Scott M.P. , Turner J.E. , Tsai R. , submitted to Appl.Phys.Lett.
2. Reverse current-voltage characteristics of metal-silicide Schottky diodes
3. 6. Nauka K. , Amano J. , Scott M.P. , Turner J.E. , Weber E.R. , Tsai R. , submitted to Appl.Phys.Lett.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献