Junction leakage in titanium self‐aligned silicide devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97584
Reference3 articles.
1. Dopant redistribution during titanium silicide formation
2. Lateral growth of titanium silicide over a silicon dioxide layer
3. Reverse current-voltage characteristics of metal-silicide Schottky diodes
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