Dopant redistribution during titanium silicide formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336976
Reference7 articles.
1. A re-examination of practical performance limits of scaled n-channel and ϱ-channel MOS devices for VLSI
2. Titanium silicide formation on BF+2‐implanted silicon
3. Effects of ion implantation doping on the formation of TiSi2
4. Arsenic out‐diffusion during TiSi2formation
5. Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2‐implanted silicon
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