Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5000992
Reference22 articles.
1. Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
2. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)
3. Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
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