Damping in Free Layers of Spin-Transfer-Torque Magnetic Memory at Elevated Temperatures-Reference-Cited by-同舟云学术

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Damping in Free Layers of Spin-Transfer-Torque Magnetic Memory at Elevated Temperatures

Published:2023-09-06 Issue:3 Volume:20 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Whitney Adam^ORCID,Liu Chuanpu,Santos Tiffany S.^ORCID,Chopdekar Rajesh V.^ORCID,Carey Matthew,Street Galen,Kalappattil Vijaysankar,Leistikow Keira,Wu Mingzhong

Funder

Advanced Storage Research Consortium

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.20.034006/fulltext

Reference38 articles.

1. A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory

2. Recent Developments in Perpendicular Magnetic Anisotropy Thin Films for Data Storage Applications

3. Materials with perpendicular magnetic anisotropy for magnetic random access memory

4. Basic principles of STT-MRAM cell operation in memory arrays

5. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

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