Strain engineering in Si via closely stacked, site-controlled SiGe islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3425776
Reference19 articles.
1. High-mobility Si and Ge structures
2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
3. Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure
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1. Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates;Nanoscale;2023
2. Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots;Scientific Reports;2021-10-18
3. Single-particle and collective excitations in quantum wires comprised of vertically stacked quantum dots: Finite magnetic field;Modern Physics Letters B;2020-12-23
4. Strain detection in crystalline heterostructures using bidimensional blocking patterns of channelled particles;Journal of Physics D: Applied Physics;2018-02-22
5. X‐ray characterization of self‐organized periodic body‐centered tetragonal lattices of SiGe dots;physica status solidi c;2017-05-31
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