Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1398603
Reference18 articles.
1. Reliability issues of flash memory cells
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4. Experimental evidence of inelastic tunneling in stress-induced leakage current
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