75% inverse magnetoresistance at room temperature in Fe4N/MgO/CoFeB magnetic tunnel junctions fabricated on Cu underlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3072827
Reference12 articles.
1. Inverse tunnel magnetoresistance in magnetic tunnel junctions with an Fe4N electrode
2. Inverse Tunnel Magnetoresistance inCo/SrTiO3/La0.7Sr0.3MnO3: New Ideas on Spin-Polarized Tunneling
3. Fe∕MgO interface engineering for high-output-voltage device applications
4. Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al∕MgO∕Co80Fe20 magnetic tunnel junctions
5. Binary and ternary interstitial alloys I. The iron-nitrogen system: the structures of Fe 4 N and Fe 2 N
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