Large Sign Reversal of Tunneling Magnetoresistance in an Epitaxial Fe/MgAlOx/Fe4N Magnetic Tunnel Junction-Reference-Cited by-同舟云学术

Large Sign Reversal of Tunneling Magnetoresistance in an Epitaxial Fe/MgAlO_x/Fe₄N Magnetic Tunnel Junction

Published:2023-11-09 Issue:11 Volume:5 Page:5954-5961
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ma Tianyi¹²^ORCID,Zhu Yu³,Dainone Pambiang Abel²,Chen Tongxin²,Devaux Xavier²^ORCID,Wan Caihua¹,Migot Sylvie²,Lengaigne Gwladys²,Vergnat Michel²,Yan Yu³^ORCID,Han Xiufeng¹^ORCID,Lu Yuan²^ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

2. Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy 54011, France

3. Key Laboratory of Physics and Technology for Advanced Batteries, Department of Physics, Jilin University, Changchun 130012, China

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00937

Reference50 articles.

1. Spin-orbit torques: Materials, physics, and devices

2. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

3. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

4. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

5. All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque

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