Defect Studies of GaP Crystals Pulled from Nonstoichiometric Melts: Dislocation and ``Saucer'' Etch Pits
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661674
Reference8 articles.
1. Etching Studies of Impurity Precipitates in Pulled GaP Crystals
2. Correlation of Defect‐Impurity Interactions in GaP with Local Variations in Photoluminescence
3. HIGH‐EFFICIENCY RED‐EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION‐GROWN (η≃6%) AND CZOCHRALSKI (η≃2%) SUBSTRATES
4. Comparison of Liquid‐Encapsulated and Solution‐Grown Substrates for Efficient GaP Diodes
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2. The origin of shallow etch pit defects in low dislocation density GaP crystals;Journal of Applied Physics;1999-09-15
3. Direct Observation of Growth Striations in a Liquid Encapusulated Czochralski GaP Crystal by Light Scattering Method;Japanese Journal of Applied Physics;1993-06-15
4. (Photo)electrochemistry: a suitable tool for investigating wet etching processes on III–V semicondutors;Electrochimica Acta;1992-04
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