Comparison of Liquid‐Encapsulated and Solution‐Grown Substrates for Efficient GaP Diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1657331
Reference8 articles.
1. Pulled crystals of gallium phosphide by the liquid encapsulation method
2. Pulling of gallium phosphide crystals by liquid encapsulation
3. Formation of Built-in Light-emitting Junctions in Solution-grown GaP Containing Shallow Donors and Acceptors
4. Studies of Individual Dislocations in Crystals by X‐Ray Diffraction Microradiography
5. The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial Deposition
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1. Visible Light-Emitting Diodes - The Formative Years;Materials Science Forum;2008-08
2. Organometallics in crystal growth;Progress in Crystal Growth and Characterization;1984-01
3. Cathodoluminescence around Dislocations in an LEC-GaP Crystal;Japanese Journal of Applied Physics;1978-01-01
4. Heteroepitaxial Growth and Characterization of Compound Semiconductors;Heteroepitaxial Semiconductors for Electronic Devices;1978
5. Direct Observation of Dislocations in a LEC-GaP Crystal by Light Scattering Method;Japanese Journal of Applied Physics;1976-04
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