Formation of Built-in Light-emitting Junctions in Solution-grown GaP Containing Shallow Donors and Acceptors
Author:
Publisher
IBM
Subject
General Computer Science
Link
http://xplorestaging.ieee.org/ielx5/5288520/5392058/05392059.pdf?arnumber=5392059
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Photoconductivity in solution‐grown copper‐doped GaP;Journal of Applied Physics;1974-12
2. Properties and Applications of III–V Compound Films Deposited by Liquid Phase Epitaxy;Physics of Thin Films - Advances in Research and Development;1973
3. Isoelectronic Trap Li-Li-O in GaP;Physical Review B;1971-10-15
4. Electronic Structure and Luminescence Processes in In1−xGaxP Alloys;Journal of Applied Physics;1971-08
5. Electron mobilities and photoluminescence of solution grown indiumphosphide single crystals;Journal of Physics and Chemistry of Solids;1970-12
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