Deep-level spectroscopy studies of confinement levels in SiGe quantum wells-Reference-Cited by-同舟云学术

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Deep-level spectroscopy studies of confinement levels in SiGe quantum wells

Published:2009-10-15 Issue:8 Volume:106 Page:084903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Antonova Irina V.,Neustroev Efim P.,Smagulova Svetlana A.,Kagan Miron S.,Alekseev Pavel S.,Ray Samit K.,Sustersic Nathan,Kolodzey James

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3153974

Reference15 articles.

1. Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors.

2. Effect of interface states on population of quantum wells in SiGe/Si structures

3. Weak Localization in SiGe Quantum Wells Doped with Boron

4. Electrical passivation of Si∕SiGe∕Si structures by 1-octadecene monolayers

5. Conduction-band offsets in pseudomorphicInxGa1−xAs/Al0.2Ga0.8As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers;AIP Advances;2012-09

2. Resonant tunneling in Si/SiGe/Si structures with a single quantum well under surface passivation;Journal of Applied Physics;2011-12-15

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