Electrical passivation of Si∕SiGe∕Si structures by 1-octadecene monolayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2775083
Reference11 articles.
1. STRAINED SILICON GERMANIUM HETEROSTRUCTURES FOR DEVICE APPLICATIONS
2. Si/SiGe heterostructures: from material and physics to devices and circuits
3. Lateral Transport in Strained SiGe Quantum Wells Doped with Boron
4. Capacitance study of selectively doped SiGe/Si heterostructures
5. Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy
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1. Electrical characterization of p-Si/SiGe/Si(100) surface covered by 9,10 Phenanthrenequinone over layer;Vacuum;2014-03
2. Electrical characterization of Si(100) surface at p-Si/SiGe/Si structure using low temperature Hall measurement analysis;Vacuum;2013-07
3. Chemical and electrical passivation of Si(111) surfaces;Applied Surface Science;2012-01
4. Resonant tunneling in Si/SiGe/Si structures with a single quantum well under surface passivation;Journal of Applied Physics;2011-12-15
5. Measurement of the Surface Recombination Velocity in Organically Functionalized Silicon Nanostructures: The Case of Silicon on Insulator;The Journal of Physical Chemistry C;2011-10-25
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