High temperature measurements of metal contacts on epitaxial graphene-Reference-Cited by-同舟云学术

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High temperature measurements of metal contacts on epitaxial graphene

Published:2011-08-15 Issue:7 Volume:99 Page:073506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nagareddy V. K.,Nikitina I. P.,Gaskill D. K.,Tedesco J. L.,Myers-Ward R. L.,Eddy C. R.,Goss J. P.,Wright N. G.,Horsfall A. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3627167

Reference23 articles.

1. Graphene: Status and Prospects

2. Detection of individual gas molecules adsorbed on graphene

3. High-temperature quenching of electrical resistance in graphene interconnects

4. Contact resistance in few and multilayer graphene devices

5. Epitaxial Graphene Growth on SiC Wafers

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1. Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal–graphene contacts and electrical gating;APL Materials;2020-10-01

2. Enhancing Thermal Interface Conductance to Graphene Using Ni–Pd Alloy Contacts;ACS Applied Materials & Interfaces;2020-07-01

3. Growth of Single-sided ZnO nanocombs/ML graphene Heterostructures;Arabian Journal of Chemistry;2019-12

4. Comparative study of electron transfer on various graphene-metallic contacts;Modern Physics Letters B;2019-11-10

5. High Temperature Graphene Sensors for Harsh Environment Current Sensing;2019 IEEE SENSORS;2019-10

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