Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal–graphene contacts and electrical gating
Author:
Affiliation:
1. Institute of Microelectronics of Barcelona, IMB-CNM, CSIC, 08193 Bellaterra, Spain
2. Universitat Autònoma de Barcelona, UAB, 08193 Bellaterra, Spain
Funder
Agència de Gestió d’Ajuts Universitaris i de Recerca
Ministerio de Ciencia, Innovación y Universidades
H2020 Marie Sklodowska-Curie Actions
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0022341
Reference183 articles.
1. Tuning superconductivity in twisted bilayer graphene
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5. Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
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