III-nitrides on oxygen- and zinc-face ZnO substrates-Reference-Cited by-同舟云学术

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III-nitrides on oxygen- and zinc-face ZnO substrates

Published:2005-10-31 Issue:18 Volume:87 Page:184104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Namkoong Gon,Burnham Shawn,Lee Kyoung-Keun,Trybus Elaissa,Doolittle W. Alan,Losurdo Maria,Capezzuto Pio,Bruno Giovanni,Nemeth Bill,Nause Jeff

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2120912

Reference23 articles.

1. Very-high power density AlGaN/GaN HEMTs

2. High-frequency measurements of AlGaN/GaN HEMTs at high temperatures

3. GaN based transistors for high power applications

4. A review of junction field effect transistors for high-temperature and high-power electronics

5. 250nmAlGaN light-emitting diodes

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates;AIP Advances;2023-04-01

2. Growth of high quality (In,Ga)N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy;AIP Advances;2020-07-01

3. InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001);Journal of Applied Physics;2018-09-21

4. Fabrication of Blue Light-Emitting Diode with Vertical Structure on the ZnO Substrate;Journal of Nanoelectronics and Optoelectronics;2017-01-01

5. Effective approach for accurately calculating individual energy of polar heterojunction interfaces;Physical Review B;2016-09-06

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