High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity-Reference-Cited by-同舟云学术

High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity

Published:2021-01-18 Issue:3 Volume:118 Page:031102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Back Joonho¹^ORCID,Wong Matthew S.²,DenBaars Steven P.¹²^ORCID,Weisbuch Claude²³,Nakamura Shuji¹²

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, IP Paris, Palaiseau 91128, France

Funder

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Simons Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0039773

Reference34 articles.

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2. Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes

3. Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length

4. W. K. Wang , R. H. Horng , S. Y. Huang , J. M. Chen , Y. J. Tsai , and D. S. Wuu , in 2005 International Conference on Solid State Devices and Materials, Kobe (2005), pp. 712–713.

5. Resonant-cavity InGaN quantum-well blue light-emitting diodes

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