Direct evidence for co‐aggregation of carbon and oxygen in Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95985
Reference8 articles.
1. Carbon in silicon: Properties and impact on devices
2. Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals
3. Quantitative image acquisition system for ion microscopy based on the resistive anode encoder
4. The effects of processing conditions on the out‐diffusion of oxygen from Czochralski silicon
5. Self‐interstitial enhanced carbon diffusion in silicon
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4. Proximity gettering of C3H5carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities;Japanese Journal of Applied Physics;2016-11-02
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