The effects of processing conditions on the out‐diffusion of oxygen from Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331796
Reference16 articles.
1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
2. The influence of thermal point defects on the precipitation of oxygen in dislocation‐free silicon crystals
3. Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°K
4. Diffusivity of oxygen in silicon during steam oxidation
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1. Ultrahigh sensitivity SIMS analysis of oxygen in silicon;Surface and Interface Analysis;2018-05-17
2. Mechanisms of Oxygen Precipitation in Cz-Si Wafers Subjected to Rapid Thermal Anneals;Journal of The Electrochemical Society;2011
3. Silicon Dioxide as a Boundary for Oxygen Outdiffusion from CZ-Si;Defect and Diffusion Forum;2010-04
4. CoSi 2 /TiO 2 /SiO 2 /Si gate structure formation;SPIE Proceedings;2009-10-23
5. Trans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon;Solid State Phenomena;2009-10
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