Carrier transport in stripe‐geometry Ga1−xAlxAs double heterostructure diode lasers and broad area heterojunctions-Reference-Cited by-同舟云学术

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Carrier transport in stripe‐geometry Ga1−xAlxAs double heterostructure diode lasers and broad area heterojunctions

Published:1983-04 Issue:4 Volume:54 Page:1981-1987
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zemel A.,Willemsen H. W.,Anderson K. D.,Shepherd F. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.332211

Reference15 articles.

1. Current‐voltage characteristics of AlxGa1−xAs Schottky barriers andp‐njunctions

2. The graded‐gap Alx Ga1 − x As–GaAs heterojunction

3. Origin ofn≃2 injection current in AlxGa1−xAs heterojunctions

4. Origin ofn≃2 injection current in AlxGa1−xAs heterojunctions

5. Origin ofn≃2 injection current in AlxGa1−xAs heterojunctions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of surface recombination velocities in InGaP and AlGaAs mesa diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-01

2. Surface recombination in dry etched AlGaAs/GaAs double heterostructurep‐i‐nmesa diodes;Applied Physics Letters;1993-01-04

3. Transport mechanisms in GaAlAs-based laser structures;Semiconductor Science and Technology;1991-04-01

4. An AlGaAs/GaAs oxide‐stripe double‐heterostructure laser;Journal of the Chinese Institute of Engineers;1985-04

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