Transport mechanisms in GaAlAs-based laser structures-Reference-Cited by-同舟云学术

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Transport mechanisms in GaAlAs-based laser structures

Published:1991-04-01 Issue:4 Volume:6 Page:261-267
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hubik P,Smid V,Kristofik J,Mares J J,Hulicius E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=4/a=006/pdf

Reference18 articles.

1. The effect of surface recombination on current in AlxGa1−xAs heterojunctions

2. Carrier transport in stripe‐geometry Ga1−xAlxAs double heterostructure diode lasers and broad area heterojunctions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DXcenter in AlGaAsSb:Te and a mechanism of its ionization;Journal of Applied Physics;1996-03

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