Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN∕GaN multiple quantum wells-Reference-Cited by-同舟云学术

Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN∕GaN multiple quantum wells

Published:2004-08-15 Issue:4 Volume:96 Page:1899-1903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zheng X. H.,Chen H.,Yan Z. B.,Li D. S.,Yu H. B.,Huang Q.,Zhou J. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1769099

Reference30 articles.

1. Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well

2. Nitride-based green light emitting diodes grown by temperature ramping

3. Solid phase immiscibility in GaInN

4. Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

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