Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. The Blue Laser Diode;Nakamura,1997
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
4. Exciton localization in InGaN quantum well devices
5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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