Origin of the drain current bistability in polymer ferroelectric field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2713856
Reference18 articles.
1. Nonvolatile memory element based on a ferroelectric polymer Langmuir–Blodgett film
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4. High-performance solution-processed polymer ferroelectric field-effect transistors
5. High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectric
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