Nonvolatile memory element based on a ferroelectric polymer Langmuir–Blodgett film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1533844
Reference11 articles.
1. A new solid state memory resistor
2. The Physics of Ferroelectric Memories
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4. Ferroelectric properties of vinylidene fluoride copolymers
5. A Metal-Insulator-Semiconductor (MIS) Device Using a Ferroelectric Polymer Thin Film in the Gate Insulator
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