Chemical reaction jet spectroscopy, molecular structure, and the bending potential of the à 1A″ state of monofluorosilylene (HSiF)
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.469789
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5. Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition
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