Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels-Reference-Cited by-同舟云学术

Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

Published:2007-03-19 Issue:12 Volume:90 Page:122111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Shih-Ching,Chang Ting-Chang,Liu Po-Tsun,Wu Yung-Chun,Yeh Ping-Hung,Weng Chi-Feng,Sze S. M.,Chang Chun-Yen,Lien Chen-Hsin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2715443

Reference14 articles.

1. Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration

2. Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

3. A. J. Walker, S. Nallamothu, E. H. Chen, M. Mahajani, S. B. Herner, M. Clack, J. M. Cleeves, S. V. Dunton, V. L. Eckert, J. Gu, S. Hu, J. Knall, M. Konevecki, C. Petti, S. Radigan, U. Raghuram, J. Vienna, and M. A. Vyvoda, Tech. Dig. VLSI Technol. Symp. 2003, 29.

4. K. Yoneda, R. Yokoyama, and T. Yamada, Tech. Dig. VLSI Technol. Symp. 2001, 85.

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism;IEEE Journal of the Electron Devices Society;2022

2. Effects of tunneling dielectrics formed by CO2 and N2O plasma-assisted oxidations on memory characteristics in p-channel LTPS NVM devices with ONO structure;Semiconductor Science and Technology;2018-10-24

3. Improvement of data retention characteristics of OSOSO multi-stacked MIS capacitor for flat panel display technology;Materials Science in Semiconductor Processing;2015-09

4. Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions;Transactions on Electrical and Electronic Materials;2015-08-25

5. Physical and chemical mechanisms in oxide-based resistance random access memory;Nanoscale Research Letters;2015-03-12