Improvement of data retention characteristics of OSOSO multi-stacked MIS capacitor for flat panel display technology-Reference-Cited by-同舟云学术

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Improvement of data retention characteristics of OSOSO multi-stacked MIS capacitor for flat panel display technology

Published:2015-09 Issue: Volume:37 Page:9-13
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Raja Jayapal,Jung Sungwook,Jang Kyungsoo,Jin Zhenghai,Chatterjee Somenath,Velumani S,Kim Jiwoong,Yi Junsin

Funder

Ministry of Education

Human Resources Development Program

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. H. Kimura, T. Maeda, T. Tsunashima, T. Morita, H. Murata, S. Hirota, H. Sato, in: Proceedings of the SID International Symposium Digest, vol. 32, 2001, p. 268.

2. H. Tokioka, M. Agari, M. Inoue, T. Yamamoto, H. Murai, H. Nagata, in: Proceedings of the SID International Symposium Digest, vol.32, 2001, p. 280.

3. M. Senda, Y. Tsutsui, R. Yokoyama, K. Yoneda, in: Proceedings of the SID International Symposium Digest, vol. 33, 2002, p. 790.

4. Improved Memory Characteristics by NH3Post Annealing for ZrO2Based Charge Trapping Nonvolatile Memory

5. Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

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