Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1940734
Reference17 articles.
1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
2. Study of defects in GaN films by cross-sectional cathodoluminescence
3. Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching
4. Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication
5. Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN
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