Phonons in strained In1−xGaxAs∕InP epilayers characterized by infrared reflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1940732
Reference14 articles.
1. GaInAsP Alloy Semiconductors, edited by T. P. Pearsall (Wiley, New York, 1982), pp. 61 and 87.
2. Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering
3. S. Adachi, in Indium Gallium Arsenide, edited by P. Bhattacharya (INSPEC, London, 1993), pp. 47–57.
4. Effects of interface broadening on far-infrared and Raman spectra of GaAs/AlAs superlattices
5. Spectroscopy of the optical vibrational modes in GaAs/AlxGa1−xAs heterostructures with monolayer-wideAlxGa1−xAs barriers
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