Optical characterization of Si-doped metamorphic InGaAs with high indium content-Reference-Cited by-同舟云学术

Optical characterization of Si-doped metamorphic InGaAs with high indium content

Published:2017-05-15 Issue:9 Volume:254 Page:1700094
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Chen Xingyou¹,Gu Yi¹,Zhang Yonggang¹,Ma Yingjie¹,Xi Suping¹,Du Ben¹,Di Zengfeng¹,Ji Wanyan¹,Shi Yanhui¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; 865 Changning Road 200050 Shanghai P.R. China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm

2. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates

3. Carrier scattering and relaxation dynamics in n-type In0.83Ga0.17As as a function of temperature and doping density

4. Fourier transform infrared spectroscopy approach for measurements of photoluminescence and electroluminescence in mid-infrared

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