HfO2 dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima-Reference-Cited by-同舟云学术

HfO2 dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima

Published:2015-10-14 Issue:14 Volume:118 Page:144301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Cheng¹,Xie Dan¹,Xu Jian-Long¹,Li Xin-Ming²,Sun Yi-Lin¹^ORCID,Dai Rui-Xuan¹,Li Xian¹,Zhu Hong-Wei³⁴

Affiliation:

1. Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China

2. National Center for Nanoscience and Technology, Zhongguancun, Beijing 100190, China

3. School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Materials Processing Technology of MOE, Tsinghua University, Beijing 100084, China

4. Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4932645

Reference23 articles.

1. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

2. Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics