Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference46 articles.
1. F. Medjdoub, M. Zegaoui, N. Waldhoff, B. Grimbert, N. Rolland, P.A. Rolland, Above 600mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high-electron-mobility transistors grown on silicon. Appl. Phys. Express. 4(064106), 1–3 (2011)
2. U. Bianka, G. Tibor, Transformation: nanotechnology—challenges in transistor design and future technologies. Elektrotechn Informationstechn 134, 349–354 (2017)
3. Y.Y. Noh, N. Zhao, M. Caironi, H. Sirringhaus, Downscaling of self-aligned, all-printed polymer thin-film transistors. Nat. Nanotechnol. 2, 784–789 (2007)
4. J. Robertson, R.M. Wallace, High-K materials and metal gates for CMOS applications. Mater. Sci. Eng. R Reports. 88, 1–41 (2015)
5. C. Adelmann, V. Sriramkumar, S. Van Elshocht, P. Lehnen, T. Conard, S. De Gendt, Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films. Appl. Phys. Lett. 91, 37–40 (2007)
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献