Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media-Reference-Cited by-同舟云学术

Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

Published:2021-05-12 Issue:5 Volume:4 Page:5152-5163
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Kahro Tauno¹^ORCID,Tarre Aivar¹,Käämbre Tanel¹,Piirsoo Helle-Mai¹,Kozlova Jekaterina¹^ORCID,Ritslaid Peeter¹^ORCID,Kasikov Aarne¹,Jõgiaas Taivo¹,Vinuesa Guillermo²,Dueñas Salvador²,Castán Helena²,Tamm Aile¹^ORCID,Kukli Kaupo¹

Affiliation:

1. Institute of Physics, University of Tartu, W. Ostwald 1, 50411 Tartu, Estonia

2. Department of Electronics, University of Valladolid. Paseo Belén, 15. 47011 Valladolid, Spain

Funder

European Regional Development Fund

Ministerio de Econom?a y Competitividad

Estonian Research Agency

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c00587

Reference67 articles.

1. Metal oxide-resistive memory using graphene-edge electrodes

2. Memristive Non-Volatile Memory Based on Graphene Materials

3. Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores

4. Graphene-HfO2-based resistive RAM memories

5. Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene

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2. Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media;Nanomaterials;2023-04-09

3. Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO₂ Nanocrystals in Nanoscale Devices;The Journal of Physical Chemistry C;2022-10-23

4. Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles;Electronics;2022-09-19

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