Structural characterization of low‐temperature molecular beam epitaxial In0.52Al0.48As/InP heterolayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106483
Reference10 articles.
1. AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
2. Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP
3. New MBE buffer used to eliminate backgating in GaAs MESFETs
4. Breakdown of crystallinity in low‐temperature‐grown GaAs layers
5. Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs
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2. Pyramidal-plane ordering in AlGaN alloys;Applied Physics Letters;2003-01-27
3. Comparison of homogeneously grown and temperature-graded InAlAs buffers in the range 400–560°C: effects on surface morphology and layer stability;Thin Solid Films;1999-12
4. Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Optical and electrical characterization of low temperature grown GaInAs;Semiconductor Science and Technology;1998-09-01
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