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Optical and electrical characterization of low temperature grown GaInAs

  • Published:1998-09-01 Issue:9 Volume:13 Page:1031-1035
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Khirouni K,Alaya S,Nagle J,Bourgoin J C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications;Semiconductor Science and Technology;2020-08-17

2. Electrical properties of polycrystalline GaInAs thin films;Thin Solid Films;2010-10

3. Properties of low-temperature-grown InAs and their changes upon annealing;Journal of Crystal Growth;2007-04

4. Conduction mechanisms in ion-irradiated InGaAs layers;Journal of Applied Physics;2005-03-15

5. Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime;Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII;2004-06-16
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