Sharp‐line photoluminescence of GaAs grown by low‐temperature molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107561
Reference15 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
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3. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
4. Deep level studies in MBE GaAs grown at low temperature
5. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique
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