Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires-Reference-Cited by-同舟云学术

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Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Published:2016-05-02 Issue:18 Volume:108 Page:182106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Arab Shermin¹²,Yao Maoqing¹²,Zhou Chongwu¹²³,Daniel Dapkus P.¹²³⁴,Cronin Stephen B.¹²³

Affiliation:

1. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089-0271, USA

2. Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089-0271, USA

3. Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0271, USA

4. Department of Physics, University of Southern California, Los Angeles, California 90089-0271, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4947504

Reference43 articles.

1. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

2. Optically pumped room-temperature GaAs nanowire lasers

3. GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

4. Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure

5. Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies

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