Growth of Si-Doped β-Ga2O3 Epi-Layer by Metal Organic Chemical Vapor Deposition Using Diluted SiH4-Reference-Cited by-同舟云学术

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Growth of Si-Doped β-Ga2O3 Epi-Layer by Metal Organic Chemical Vapor Deposition Using Diluted SiH4

Published:2023-12-27 Issue:12 Volume:33 Page:525-529
ISSN:1225-0562
Container-title:Korean Journal of Materials Research
language:en
Short-container-title:Korean. J. Mater. Res.

Author:

Kim Hyeong-Yun¹,Kim Sunjae²,Cheon Hyeon-U³,Lee Jae-Hyeong⁴,Jeon Dae-Woo⁴,Park Ji-Hyeon⁴

Affiliation:

1. Department of Material Science and Engineering, Korea University, Seoul 02841, Republic of Korea

2. Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea

3. Department of Nanomechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea

4. Display Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea

Publisher

The Materials Research Society of Korea

Link

https://journal.mrs-k.or.kr/articles/pdf/doi/10.3740/MRSK.2023.33.12.525.pdf

Reference18 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. Ga2O3 polymorphs: tailoring the epitaxial growth conditions

3. Crystal Structure of β‐Ga2O3

4. Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate

5. A 800 V β‐Ga 2 O 3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm −2

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