Comparison of homogeneously grown and temperature-graded InAlAs buffers in the range 400–560°C: effects on surface morphology and layer stability
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Very high current density pseudomorphic double channel In0.49Ga0.51P/In0.3Ga0.7As/GaAs HEMT
2. GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results
3. Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 μm gates
4. Influence of the desorption and growth temperatures on the crystalline quality of molecular-beam epitaxy InAlAs layers
5. Contrast modulations in InAIAs/InP
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