Effects influencing electron and hole retention times in Ge nanocrystal memory structures operating in the direct tunneling regime
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3467527
Reference29 articles.
1. Silicon Nanocrystal Memories: A Status Update
2. A silicon nanocrystals based memory
3. Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
4. Valence band energy in confined Si1−xGex (0.28
5. Quantum confinement observed in Ge nanodots on an oxidized Si surface
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5. GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method;Size Effects in Nanostructures;2014
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